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Strong field hole transport in 6H-SiC
AF Ioffe Physicotech Institute, Russia.
AF Ioffe Physicotech Institute, Russia.
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
2009 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951 , Vol. 94, no 8, 082101- p.Article in journal (Refereed) Published
Abstract [en]

In materials with a small degree of ionicity ranging 10%-15%, such as in SiC, carrier scattering on polar optical potential is plausible. J-F characteristics of hot hole transport in 6H-SiC with N-a-N-d similar to 5x10(17) cm(-3) are studied at electrical fields of 1-150 kV/cm and temperatures from 300 to 600 K. In this work possible mechanisms contributing to the J-F characteristics are considered: scattering on ionized impurities, impurity breakdown due to Al acceptors, hole transport in the light valence subband formed due to splitting by crystal field, and dielectric breakdown related to polar optical scattering.

Place, publisher, year, edition, pages
2009. Vol. 94, no 8, 082101- p.
Keyword [en]
crystal field interactions, electric breakdown, electron mobility, high field effects, hole mobility, hot carriers, impurities, light scattering, silicon compounds, wide band gap semiconductors
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-17387DOI: 10.1063/1.3089233OAI: diva2:208929
Available from: 2009-03-21 Created: 2009-03-21 Last updated: 2009-03-21

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Yakimova , Rositsa
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