Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates
2009 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 94, no 8, 082109- p.Article in journal (Refereed) Published
A sublimation-recondensation process is presented for high quality AlN (0001) crystals at a high growth rate by employing 4H-SiC substrates with a predeposited epilayer. It is based on the coalescence of well oriented AlN microrods, which evolve from the apex of 2H-SiC pyramids grown out of hexagonal pits formed by thermal etching of the substrate during a temperature ramp up. This process yields stress-free 120-mu m-thick AlN single crystals with a dislocation density as low as 2x10(6) cm(-2).
Place, publisher, year, edition, pages
2009. Vol. 94, no 8, 082109- p.
aluminium compounds, condensation, crystal growth from vapour, dislocation density, etching, III-V semiconductors, semiconductor growth, silicon compounds, sublimation, wide band gap semiconductors
IdentifiersURN: urn:nbn:se:liu:diva-17388DOI: 10.1063/1.3085958OAI: oai:DiVA.org:liu-17388DiVA: diva2:208930