Non Degrading PiN Diodes Grown On On-axis 4H-SiC Substrates
(English)Manuscript (Other academic)
Bipolar PiN diodes have been fabricated using epitaxial layers grown on nominally onaxis Si-face 4H-SiC substrates. Top metal contacts were processed with windows to observe the electroluminescence and any formation of stacking faults during forward current injection. The diodes were tested for voltage stability using a forward current density of 120 A/cm2 for 30 min. More than 70 % of the diodes showed a stable behavior and change in the forward voltage was less than 0.1 V. No movement of basal plane dislocations or the formation of stacking faults was observed using electroluminescence. Most of the remaining diodes failed completely due to contact breakdown.
IdentifiersURN: urn:nbn:se:liu:diva-17435OAI: oai:DiVA.org:liu-17435DiVA: diva2:209367