Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
2010 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 313, 1828-1837 p.Article in journal (Other academic) Published
Characterization of the epitaxial defect known as the carrot was performed in thick 4HSiC epilayers. A large number of the carrot defects have been studied using different experimental techniques such as optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam x-ray topography. This has revealed that the carrot defects appear in many different shapes and structures in the layers. Our results support the previous assignment of the defect as related to a prismatic stacking fault. However, we have observed the carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. The carrot defects have found to be originated both at epi-substrate interface and during the epitaxial growth. Also, different sources of the carrot defect have been observed which resulted in different structure of the defect inside the epilayer.
Place, publisher, year, edition, pages
2010. Vol. 313, 1828-1837 p.
IdentifiersURN: urn:nbn:se:liu:diva-17437DOI: 10.1016/j.jcrysgro.2010.02.037OAI: oai:DiVA.org:liu-17437DiVA: diva2:209380