In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
2009 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 105, no 12, 123513- p.Article in journal (Other academic) Published
Different and novel in-grown stacking faults have been observed and characterized in 4H-SiC epitaxial layers grown on 4 or 8o off-cut substrates. Two different kinds of triangular stacking faults were observed in the epilayers grown on 4o off-cut substrates. The faults were formed during epitaxial growth close to the epi-substrate interface and increased continuously in size during growth. Their structural and optical properties were however different as seen from both synchrotron white beam topography and low temperature photoluminescence. The luminescence spectra were similar but appeared in different energy regions 2.85 – 2.95 eV and 2.48 – 2.64 eV, respectively which have not been observed for previously reported stacking faults. A third stacking fault was observed in 8o off-cut as-grown epilayers, sometime with higher density. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. Also this fault started close to the epi-substrate interface, expanded rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum from this fault is identical to the emission from the stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.
Place, publisher, year, edition, pages
2009. Vol. 105, no 12, 123513- p.
IdentifiersURN: urn:nbn:se:liu:diva-17438DOI: 10.1063/1.3139268OAI: oai:DiVA.org:liu-17438DiVA: diva2:209383