Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
1995 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 52, R8643-R8645 p.Article in journal (Refereed) Published
It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.
Place, publisher, year, edition, pages
1995. Vol. 52, R8643-R8645 p.
Natural Sciences Biological Sciences
IdentifiersURN: urn:nbn:se:liu:diva-17476DOI: 10.1103/PhysRevB.52.R8643OAI: oai:DiVA.org:liu-17476DiVA: diva2:209619
Original Publication:P. O. Nilsson, J. Kanski, J. V. Thordson, T. G. Andersson, J. Nordgren, J. Guo and Martin Magnuson, Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission, 1995, Physical Review B. Condensed Matter and Materials Physics, (52), R8643-R8645.http://dx.doi.org/10.1103/PhysRevB.52.R8643Copyright: American Physical Societyhttp://www.aps.org/2009-03-262009-03-252013-10-02Bibliographically approved