Dilute nitrides and 1.3 mu m GaInNAs quantum well lasers on GaAs
2009 (English)In: MICROELECTRONICS JOURNAL, ISSN 0026-2692 , Vol. 40, no 3, 386-391 p.Article in journal (Refereed) Published
We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 mu m at 300 K. High quality 1.3 mu m GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100 x 1000 mu m(2)) is 300, 300, 400 and 940 A/cm(2) for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 degrees C under a constant voltage has been demonstrated.
Place, publisher, year, edition, pages
2009. Vol. 40, no 3, 386-391 p.
Dilute nitride, 1.3 mu m, GaInNAs, GaAs, Laser
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-17742DOI: 10.1016/j.mejo.2008.06.013OAI: oai:DiVA.org:liu-17742DiVA: diva2:211818