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Dilute nitrides and 1.3 mu m GaInNAs quantum well lasers on GaAs
University of Cambridge.
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2009 (English)In: MICROELECTRONICS JOURNAL, ISSN 0026-2692 , Vol. 40, no 3, 386-391 p.Article in journal (Refereed) Published
Abstract [en]

We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 mu m at 300 K. High quality 1.3 mu m GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100 x 1000 mu m(2)) is 300, 300, 400 and 940 A/cm(2) for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 degrees C under a constant voltage has been demonstrated.

Place, publisher, year, edition, pages
2009. Vol. 40, no 3, 386-391 p.
Keyword [en]
Dilute nitride, 1.3 mu m, GaInNAs, GaAs, Laser
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-17742DOI: 10.1016/j.mejo.2008.06.013OAI: diva2:211818
Available from: 2009-04-18 Created: 2009-04-17 Last updated: 2009-04-18

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Zhao, Qingxiang
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Department of Science and TechnologyThe Institute of Technology
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