Electron spin control in dilute nitride semiconductors
2009 (English)In: JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN 0953-8984, Vol. 21, no 17, 174211- p.Article in journal (Refereed) Published
We report on a study of spin-dependent recombination processes (SDR) for conduction band electrons on deep paramagnetic centers in a series of GaAs1-yNy epilayers by time-resolved optical orientation experiments. We demonstrate that this dilute nitride compound can be used as an effective electron spin filter under a polarized optical excitation of appropriate intensity. This optimum intensity can moreover be controlled by adjusting the nitrogen composition in the layer.
Place, publisher, year, edition, pages
2009. Vol. 21, no 17, 174211- p.
IdentifiersURN: urn:nbn:se:liu:diva-17744DOI: 10.1088/0953-8984/21/17/174211OAI: oai:DiVA.org:liu-17744DiVA: diva2:211819