Improvement of porous silicon based gas sensors by polymer modification
2003 (English)In: Physica Status Solidi (A), ISSN 0031-8965 (print), 1521-396X (online), Vol. 197, no 2, 378-381 p.Article in journal (Refereed) Published
Gas sensing was performed using spectroscopic ellipsometry and porous silicon films. Modification of the porous layer by polymer deposition showed an increase in sensitivity to organic solvent vapor of up to 135%. The increase in sensitivity is strongly dependent on polymer concentration. At high concentrations, too much polymer is deposited, presumably blocking the pores, causing a decrease in sensitivity. At sufficiently low concentrations, the polymer causes a strong increase in sensitivity. This is assumed to be caused by the polymer being deposited inside the pores, where its interaction with the vapor influences the sensitivity. At very low concentration, the sensitivity approaches values obtained without polymer modification. The sensitivity increase is different for different vapors, pointing to possible selectivity enhancement.
Place, publisher, year, edition, pages
2003. Vol. 197, no 2, 378-381 p.
07.07.Df, 61.43.Gt, 78.67.Bf, 82.35.Gh
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-13772DOI: 10.1002/pssa.200306529OAI: oai:DiVA.org:liu-13772DiVA: diva2:21431