Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
2009 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248 , Vol. 311, no 7, 1723-1727 p.Article in journal (Refereed) Published
We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate.
Place, publisher, year, edition, pages
2009. Vol. 311, no 7, 1723-1727 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-18274DOI: 10.1016/j.jcrysgro.2008.11.070OAI: oai:DiVA.org:liu-18274DiVA: diva2:217845