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Growth of GaInNAs and 1.3 mu m edge emitting lasers by molecular beam epitaxy
Chalmers.
Chalmers.
Chalmers.
University of Cambridge.
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2009 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248 , Vol. 311, no 7, 1863-1867 p.Article in journal (Refereed) Published
Abstract [en]

We show that the use of a low growth rate combined with low N flux and RF power during molecular beam epitaxy (MBE) growth of dilute nitrides can efficiently enhance N incorporation while retaining good optical quality. A maximum light emission wavelength of 1.44 and 1.71 mu m has been obtained at 300 K from GaNAs and GaInNAs quantum wells, respectively. We demonstrate high-performance 1.3 pm GaInNAs multiple quantum well edge emitting lasers with record low threshold current densities, a 3 dB modulation bandwidth of 17 GHz at 300 K and capability of being modulated at 10 Gbit/s up to 110 degrees C without extra coolers. Our results show that MBE is an epitaxial technology suitable for the growth of dilute nitride materials and devices.

Place, publisher, year, edition, pages
2009. Vol. 311, no 7, 1863-1867 p.
Keyword [en]
MBE, GaAs, GaInNAs, 1.3 mu m edge emitting laser
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-18275DOI: 10.1016/j.jcrysgro.2008.10.091OAI: oai:DiVA.org:liu-18275DiVA: diva2:217846
Available from: 2009-05-16 Created: 2009-05-15 Last updated: 2009-05-16

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Zhao, Qingxiang

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