Very high growth rate of 4H-SiC using MTS as chloride-based precursor
2009 (English)In: Materials Science Forum, Vol. 600-603, Trans Tech Publications , 2009, Vol. 600-603, 115-118 p.Conference paper (Refereed)
The chlorinated precursor methyltrichlorosilane (MTS), CH 3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si less than 1 but was constant for C/Si greater than 1. Further, the growth rate decreased with lower Cl/Si ratio.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. Vol. 600-603, 115-118 p.
Chloride-based CVD growth; Epilayers; High growth rate
IdentifiersURN: urn:nbn:se:liu:diva-18773DOI: 10.4028/www.scientific.net/MSF.600-603.115OAI: oai:DiVA.org:liu-18773DiVA: diva2:221770
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan