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Characterization of electronic properties of different SiC polytypes by all-optical means
Vilnius University.
Vilnius University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: Materials Science Forum, Vols. 600-603, 2009, Vol. 600-603, 509-512 p.Conference paper, Published paper (Refereed)
Abstract [en]

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10-300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 � 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.

Place, publisher, year, edition, pages
2009. Vol. 600-603, 509-512 p.
Keyword [en]
Carrier lifetime; Carrier scattering; Diffusion coefficient; Mobility
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-18775DOI: 10.4028/3-908453-11-9.509OAI: oai:DiVA.org:liu-18775DiVA: diva2:221775
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ICSCRM2007
Available from: 2009-06-05 Created: 2009-06-03 Last updated: 2010-12-08

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Yakimova, RositsaSyväjärvi, Mikael

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