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Spin-dependent Recombination in GaNAs
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. (Functional electronic material)
2009 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spin-dependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied.  By using the optical orientation photoluminescence (PL) technique, GaNAs is shown to be able to spin filter electrons injected from GaAs, which is a useful functional property for integratition with future electronic devices.  The spin filtering ability is found to degrade in narrow GaNAs quantum well (QW) structures which is attributed to (i) acceleration of band-to-band recombination competing with the SDR process and to (ii) faster electron spin relaxation in the narrow QWs.  Ga interstitial-related defect centers have been found to be responsible for the SDR process by using the optically detected magnetic resonance (ODMR) technique. The defects are found to be the dominant grown-in defects in GaNAs, commonly formed during both MBE and MOCVD growths.  Methods to control the concentration of the Ga interstitials by varying doping, growth parameters and post-growth treatments are also examined.

Place, publisher, year, edition, pages
2009. , 55 p.
Keyword [en]
GaNAs, spin filter, spin dependent recpmbination, defect
National Category
Condensed Matter Physics Condensed Matter Physics
URN: urn:nbn:se:liu:diva-19355ISRN: LITH-IFM-A-EX--09/2187--SEOAI: diva2:224551
Boltxmann, F-Huset (English)
Physics, Chemistry, Mathematics
Available from: 2009-06-22 Created: 2009-06-18 Last updated: 2009-11-08Bibliographically approved

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Puttisong, Yuttapoom
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