Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
2004 (English)In: Proceedings of the Norchip 2004 Conference, Oslo, Norway, November, 2004, 123-126 p.Conference paper (Refereed)
In this paper, measurements of drain thermal noise for three NMOS devices with different channel lengths was carried out. The three NMOS devices were all implemented in a 0.18 μm CMOS technology, with channel lengths 0.18. 0.36, and 0.72 μm, respectively. The result was then compared with simulated data using the BSIM3- model and parameters provided by the vendor Large discrepancies between measurements and simulations were observed. This work was done in order to understand how to utilize transistor length as a design parameter to achieve optimal noise gures for wideband LNAs in deep submicron technologies.
Place, publisher, year, edition, pages
2004. 123-126 p.
CMOS, wideband LNAs
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-14089DOI: 10.1109/NORCHP.2004.1423838ISBN: 0-7803-8510-1OAI: oai:DiVA.org:liu-14089DiVA: diva2:22601