Fabrication of beam resonators from hot-wall chemical vapour deposited SiC
2009 (English)In: Microelectronic Engineering, Vol. 86, 2009, Vol. 86, no 4-6, 1194-1196 p.Conference paper (Refereed)
Single crystal and polycrystalline 3C-SiC have been grown in a hot-wall chemical vapour deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer. The crystal structure of the films has been determined by X-ray diffraction. Moreover, cantilever resonators have been fabricated from the two grown 3C-SiC films using a one-step dry etch and release process. The designed beam length has been varied between 50 and 200 mu m. Resonant frequencies in the range between 110 kHz-1.5 MHz and 50-750 kHz have been obtained for single crystal and polycrystalline Sic devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate Youngs Modulus E for both types of SiC. The single crystal Sic has shown a relatively high Youngs Modulus (446 GPa) and should be an optimal material for RF-MEMS applications. (c) 2008 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2009. Vol. 86, no 4-6, 1194-1196 p.
3C-SiC, Hot-wall CVD, MEMS, Cantilever resonators, Youngs Modulus
IdentifiersURN: urn:nbn:se:liu:diva-19658DOI: 10.1016/j.mee.2008.11.016OAI: oai:DiVA.org:liu-19658DiVA: diva2:227223