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Fabrication of beam resonators from hot-wall chemical vapour deposited SiC
University of Edinburgh.
University of Edinburgh.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2009 (English)In: Microelectronic Engineering, Vol. 86, 2009, Vol. 86, no 4-6, 1194-1196 p.Conference paper, Published paper (Refereed)
Abstract [en]

Single crystal and polycrystalline 3C-SiC have been grown in a hot-wall chemical vapour deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer. The crystal structure of the films has been determined by X-ray diffraction. Moreover, cantilever resonators have been fabricated from the two grown 3C-SiC films using a one-step dry etch and release process. The designed beam length has been varied between 50 and 200 mu m. Resonant frequencies in the range between 110 kHz-1.5 MHz and 50-750 kHz have been obtained for single crystal and polycrystalline Sic devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate Youngs Modulus E for both types of SiC. The single crystal Sic has shown a relatively high Youngs Modulus (446 GPa) and should be an optimal material for RF-MEMS applications. (c) 2008 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2009. Vol. 86, no 4-6, 1194-1196 p.
Keyword [en]
3C-SiC, Hot-wall CVD, MEMS, Cantilever resonators, Youngs Modulus
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-19658DOI: 10.1016/j.mee.2008.11.016OAI: oai:DiVA.org:liu-19658DiVA: diva2:227223
Conference
MNE '08
Available from: 2009-07-10 Created: 2009-07-10 Last updated: 2014-10-08

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Henry, AnneJanzén, Erik

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CiteExportLink to record
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  • apa
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