Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 10, 3007-3010 p.Article in journal (Refereed) Published
The inherent advantages of the hot-wall metal organic chemical vapor deposition (MOCVD) reactor (low temperature gradients, less bowing of the wafer during growth, efficient precursor cracking) compared to a cold-wall reactor make it easier to obtain uniform growth. However, arcing may occur in the growth chamber during growth, which deteriorates the properties of the grown material. By inserting insulating pyrolytic BN (PBN) stripes in the growth chamber we have completely eliminated this problem. Using this novel approach we have grown highly uniform, advanced high electron mobility transistor (HEMT) structures on 4 semi-insulating (SI) SiC substrates with gas-foil rotation of the substrate. The nonuniformities of sheet resistance and epilayer thickness are typically less than 3% over the wafer. The room temperature hall mobility of the 2DEG is well above 2000 cm(2)/V s and the sheet resistance about 270 Omega/sqr.
Place, publisher, year, edition, pages
2009. Vol. 311, no 10, 3007-3010 p.
Metalorganic chemical vapor deposition, Nitrides, High electron mobility transistors
IdentifiersURN: urn:nbn:se:liu:diva-19663DOI: 10.1016/j.jcrysgro.2009.01.045OAI: oai:DiVA.org:liu-19663DiVA: diva2:227278
Original Publication: Urban Forsberg, Anders Lundskog, A Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén, Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures, 2009, JOURNAL OF CRYSTAL GROWTH, (311), 10, 3007-3010. http://dx.doi.org/10.1016/j.jcrysgro.2009.01.045 Copyright: Elsevier Science B.V., Amsterdam. http://www.elsevier.com/2009-08-172009-07-102012-07-10Bibliographically approved