liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Cubic Sc1-xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
Show others and affiliations
2009 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 105, no 11, 132862- p.Article in journal (Refereed) Published
Abstract [en]

Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc1-xAlxN (0 andlt;= x andlt;= 1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 S C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc1-xAlxN solid solutions with AlN molar fractions up to similar to 60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc1-xAlxN domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc1-xAlxN(0001)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], Sc1-xAlxN(10 (1) over bar1)parallel to ScN(111) with Sc1-xAlxN[(1) over bar2 (1) over bar0]parallel to ScN[1 (1) over bar0], and Sc1-xAlxN(10 (1) over bar1)parallel to ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN.

Place, publisher, year, edition, pages
2009. Vol. 105, no 11, 132862- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-19664DOI: 10.1063/1.3132862OAI: oai:DiVA.org:liu-19664DiVA: diva2:227284
Note
Original Publication: Carina Höglund, Javier Bareno, Jens Birch, Björn Alling, Zsolt Czigany and Lars Hultman, Cubic Sc1-xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111), 2009, JOURNAL OF APPLIED PHYSICS, (105), 11, 132862. http://dx.doi.org/10.1063/1.3132862 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2009-07-10 Created: 2009-07-10 Last updated: 2016-08-31
In thesis
1. Growth and Phase Stability Studies of Epitaxial Sc-Al-N and Ti-Al-N Thin Films
Open this publication in new window or tab >>Growth and Phase Stability Studies of Epitaxial Sc-Al-N and Ti-Al-N Thin Films
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

¨This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deep into the Ti-Al-N system and to explore novel Sc-Al-N compounds. Thin films were epitaxially grown by reactive dual magnetron sputtering from elemental targets onto single-crystal substrates. Ion beam analyses were used for compositional analysis and depth profiling. Different X-ray diffraction techniques were employed, ex situ using Cu radiation and in situ during deposition using synchrotron radiation, to achieve information about phases, texture, and thickness of films, and to follow roughness evolution of layers during and after growth. Transmission electron microscopy was used for overview and lattice imaging, and to obtain lattice structure information by electron diffraction.

In the Sc-Al-N system, the perovskite Sc3AlN was for the first time synthesized as a thin film and in single phase, with a unit cell of 4.40 Å. The hardness was found to be 14.2 GPa, the elastic modulus 21 GPa, and the room temperature resistivity 41.2 μΩcm. Cubic solid solutions of Sc1-xAlxN can be synthesized with AlN molar fraction up to ~60%. Higher AlN contents yield three different epitaxial relations to ScN(111), namely, #1 Sc1-xAlxN(0001) || ScN(111) with Sc1-xAlxN[11210] || ScN[110], #2 Sc1-xAlxN(1011) || ScN(110) with Sc1-xAlxN[1210] || ScN[110], and #3 Sc1-xAlxN(1011) || ScN(113). An in situ deposition and annealing study of cubic Sc0.57Al0.43N films showed volume induced phase separation into ScN and wurtzite structure AlN, via nucleation and growth at the domain boundaries. The first indications for phase separation are visible at 1000 °C, and the topotaxial relationship between the binaries after phase separation is AlN(0001) || ScN(001) and AlN<01ɸ10> || ScN <1ɸ10>. This is compared with Ti1-xAlxN, for which an electronic structure driving force leads to spinodal decomposition into isostructural TiN and AlN already at 800 °C. First principles calculations explain the results on a fundamental physics level. Up to ~22% ScN can under the employed deposition conditions be dissolved into wurtzite Sc1-xAlxN films, while retaining a single-crystal structure and with lattice parameters matching calculated values.

In the Ti-Al-N system, the Ti2AlN phase was synthesized epitaxially by solid state reaction during interdiffusion between sequentially deposited layers of AlN(0001) and Ti(0001). When annealing the sample, N and Al diffused into the Ti layer, forming Ti3AlN(111) at 400 ºC and Ti2AlN(0001) at 500 ºC. The Ti2AlN formation temperature is 175 ºC lower than earlier reported results. Another way of forming Ti2AlN phase is by depositing understoichiometric TiNx at 800 °C onto Al2O3(0001). An epitaxial Ti2Al(O,N) (0001) oxynitride forms close to the interface between film and substrate through a solid state reaction. Ti4AlN3 was, however, not possible to synthesize when depositing films with a Ti:Al:N ratio of 4:1:3 due to competing reactions. A substrate temperature of 600 ºC yielded an irregularly stacked Tin+1AlNn layered structure because of the low mobility of Al ad-atoms. An increased temperature led to Al deficiency due to outdiffusion of Al atoms, and formation of the Ti2AlN phase and a Ti1-xAlxN cubic solid solution.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2010. 98 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1314
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-56274 (URN)978-91-7393-391-9 (ISBN)
Public defence
2010-05-28, Visionen, Hus B, ingång 27, Campus Valla, Linköpings universitet, Linköping, 09:15 (English)
Opponent
Supervisors
Available from: 2010-05-06 Created: 2010-05-06 Last updated: 2016-08-31Bibliographically approved

Open Access in DiVA

fulltext(991 kB)485 downloads
File information
File name FULLTEXT01.pdfFile size 991 kBChecksum SHA-512
c76912036bc56c2b55ffe57532c9845bd63fdec738c3d6014990135ee9267b128301d576f741e591ebd94fd37979f9039c0030957c676f6acbda167c54c30767
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Höglund, CarinaBareno, JavierBirch, JensAlling, BjörnHultman, Lars

Search in DiVA

By author/editor
Höglund, CarinaBareno, JavierBirch, JensAlling, BjörnHultman, Lars
By organisation
Thin Film PhysicsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyTheoretical Physics
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 485 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 375 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf