Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
2009 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, no 15, L87-L90 p.Article in journal (Refereed) Published
The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03 degrees) than on those with a larger (0.25 degrees). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures.
Place, publisher, year, edition, pages
2009. Vol. 603, no 15, L87-L90 p.
Graphene, Silicon carbide, Carbon, Low-energy electron microscopy (LEEM), Low-energy electron diffraction (LEED), Scanning tunneling microscopy (STM)
IdentifiersURN: urn:nbn:se:liu:diva-19791DOI: 10.1016/j.susc.2009.05.005OAI: oai:DiVA.org:liu-19791DiVA: diva2:228984