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Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology. (Halvledarmaterial)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology. (Halvledarmaterial)
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. (Halvledarmaterial, Semiconductor Materials)
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2009 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, no 15, L87-L90 p.Article in journal (Refereed) Published
Abstract [en]

The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03 degrees) than on those with a larger (0.25 degrees). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures.

Place, publisher, year, edition, pages
2009. Vol. 603, no 15, L87-L90 p.
Keyword [en]
Graphene, Silicon carbide, Carbon, Low-energy electron microscopy (LEEM), Low-energy electron diffraction (LEED), Scanning tunneling microscopy (STM)
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-19791DOI: 10.1016/j.susc.2009.05.005OAI: oai:DiVA.org:liu-19791DiVA: diva2:228984
Available from: 2009-08-10 Created: 2009-08-10 Last updated: 2017-12-13Bibliographically approved

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Virojanadara, ChariyaYakimova, RositsaOsiecki, JacekSyväjärvi, MikaelUhrberg, RogerJohansson, Leif

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Virojanadara, ChariyaYakimova, RositsaOsiecki, JacekSyväjärvi, MikaelUhrberg, RogerJohansson, Leif
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