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Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
2009 (English)In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 3, no 5, 145-147 p.Article in journal (Refereed) Published
Abstract [en]

The energy position of a dip observed in the IR-reflectance spectra recorded from wurtzite c-plane AlxGa1-xN epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non-destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made.

Place, publisher, year, edition, pages
2009. Vol. 3, no 5, 145-147 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-19990DOI: 10.1002/pssr.200903113OAI: oai:DiVA.org:liu-19990DiVA: diva2:232439
Available from: 2009-08-24 Created: 2009-08-24 Last updated: 2014-10-08

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Henry, AnneLundskog, AndersJanzén, Erik

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