Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy
2009 (English)In: Nanotechnology, ISSN 0957-4484, Vol. 20, no 37, 375401- p.Article in journal (Refereed) Published
Optical spin injection is studied in novel laterally-arranged self-assembled InAs/GaAs quantum dot structures, by using optical orientation measurements in combination with tunable laser spectroscopy. It is shown that spins of uncorrelated free carriers are better conserved during the spin injection than the spins of correlated electrons and holes in an exciton. This is attributed to efficient spin relaxation promoted by the electron–hole exchange interaction of the excitons. Our finding suggests that separate carrier injection, such as that employed in electrical spin injection devices, can be advantageous for spin conserving injection. It is also found that the spin injection efficiency decreases for free carriers with high momentum, due to the acceleration of spin relaxation processes.
Place, publisher, year, edition, pages
2009. Vol. 20, no 37, 375401- p.
Quantum dots, Photoluminescence, Exciton
National CategoryCondensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-20249DOI: 10.1088/0957-4484/20/37/375401OAI: oai:DiVA.org:liu-20249DiVA: diva2:233379
Jan Beyer, Irina A Buyanova, Suwaree Suraprapapich, Charles Tu and Weimin Chen, Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy, 2009, Nanotechnology, (20), 37, 375401.
Copyright: Institute of Physics