ScAlN nanowires: A cathodoluminescence study
2009 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 311, no 11, 3147-3151 p.Article in journal (Refereed) Published
Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 mu m, a diameter between 50 and 150 run, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.
Place, publisher, year, edition, pages
2009. Vol. 311, no 11, 3147-3151 p.
Nanostructures; Hydride vapor phase epitaxy; Nitrides; Semiconducting aluminum compounds
IdentifiersURN: urn:nbn:se:liu:diva-20221DOI: 10.1016/j.jcrysgro.2009.03.023OAI: oai:DiVA.org:liu-20221DiVA: diva2:233815