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Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique
Islamia University of Bahawalpur.
Gothenburg University.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
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2009 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 105, no 12, 123510- p.Article in journal (Refereed) Published
Abstract [en]

A study of deep level defects in a hydrothermally grown, intrinsically n-type zinc oxide (ZnO) device has been carried out using conventional deep level transient spectroscopy (DLTS). Performed under variable measurement conditions, DLTS demonstrates two electron trap levels, E-1 (dominant) and E-2, with activation energies E-c-0.22 +/- 0.02 eV and E-c-0.47 +/- 0.05 eV, respectively. A time-delayed transformation of shallow donor defects zinc(interstitial) and vacancy(oxygen) (Zn-i-VO) into the E-1 level has been observed. While the x-ray diffraction measurements reveal that the preferred direction of ZnO growth is along the (10 (1) over bar0) plane, i.e., the (Zn-i-V-O) complex, it is assumed that the (Zn-i-V-O) complex is transformed into a zinc antisite (Zn-O) under favorable conditions. As a result, the free carrier concentration decreases with increasing trap concentration. Henceforth, the E-1 level exhibiting the increase in concentration is attributed to ZnO.

Place, publisher, year, edition, pages
2009. Vol. 105, no 12, 123510- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-20225DOI: 10.1063/1.3149800OAI: diva2:233822
Available from: 2009-09-02 Created: 2009-08-31 Last updated: 2014-01-15

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Nour, OmerUl Wahab, QamarWillander, Magnus
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