Thermoelectric transport properties of highly oriented FeSb2 thin films
2009 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 106, no 3Article in journal (Refereed) Published
Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S similar to 160 mu V K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.
Place, publisher, year, edition, pages
2009. Vol. 106, no 3
carrier density, electrical resistivity, Hall mobility, iron compounds, Seebeck effect, semiconductor thin films, sputter deposition
IdentifiersURN: urn:nbn:se:liu:diva-20403DOI: 10.1063/1.3155800OAI: oai:DiVA.org:liu-20403DiVA: diva2:234514
Y Sun, S Johnsen, Per Eklund, M Sillassen, J Bottiger, N Oeschler, P Sun, F Steglich and B B Iversen, Thermoelectric transport properties of highly oriented FeSb2 thin films, 2009, JOURNAL OF APPLIED PHYSICS, (106), 3, 033710.
Copyright: American Institute of Physics