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Formation of a root 3 x root 3 surface on Si/Ge(111) studied by STM and LEED
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2009 (English)In: SURFACE SCIENCE, ISSN 0039-6028, Vol. 603, no 16, 2532-2536 p.Article in journal (Refereed) Published
Abstract [en]

We have performed a detailed study of the formation and the atomic structure of a root 3 x root 3 surface on Si/Ge(111) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a root 3 x root 3 periodicity but unlike the Sn/Ge(111) and the Sn/Si(111) surfaces, the Si/Ge(111) surface is not well ordered. There is no long range order on the surface and the root 3 x root 3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.

Place, publisher, year, edition, pages
2009. Vol. 603, no 16, 2532-2536 p.
Keyword [en]
Surface atomic structure, Ge(111), Si deposition, Scanning tunneling microscopy, Low energy electron diffraction
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-20583DOI: 10.1016/j.susc.2009.05.028OAI: oai:DiVA.org:liu-20583DiVA: diva2:235295
Available from: 2009-09-15 Created: 2009-09-15 Last updated: 2012-02-06

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Osiecki, JacekUhrberg, Roger

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