Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
2009 (English)In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN 0268-1242, Vol. 24, no 9, 095004- p.Article in journal (Refereed) Published
4H-SiC PIN diodes have been fabricated on a Norstel P+/N/N+ substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 4.5 kV has been measured at 1 mu A for devices with an active area of 2.6 mm(2). The differential on-resistance at 15 A (600 A cm(-2)) was of only 1.7 m Omega cm(2) (25 degrees C) and 1.9 m Omega cm(2) at 300 degrees C. The reduced recovery charge was of 300 nC for a switched current of 15 A (500 V) at 300 degrees C. 20% of the diodes showed no degradation at all after 60 h of dc stress (25-225 degrees C). Other 30% of the diodes exhibit a reduced voltage shift below 1 V. For those diodes, the leakage current remains unaffected after the dc stress. Electroluminescence investigations reveal a very low density of stacking faults after the dc stress. The manufacturing yield evidences the efficiency of the substrate surface preparation and our technological process.
Place, publisher, year, edition, pages
2009. Vol. 24, no 9, 095004- p.
IdentifiersURN: urn:nbn:se:liu:diva-20584DOI: 10.1088/0268-1242/24/9/095004OAI: oai:DiVA.org:liu-20584DiVA: diva2:235297