Magnetron sputtering of Ti3SiC2 thin films from a Ti3SiC2 compound target
2007 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, Vol. 25, no 5, 1381-1388 p.Article in journal (Refereed) Published
Ti3 Si C2 thin films were synthesized by magnetron sputtering from Ti3 Si C2 and Ti targets. Sputtering from a Ti3 Si C2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3 Si C2 target is shown to bind the excess C in Ti Cx intergrown with Ti3 Si C2 and Ti4 Si C3. Additionally, a substoichiometric Ti Cx buffer layer is shown to serve as a C sink and enable the growth of Ti3 Si C2.
Place, publisher, year, edition, pages
2007. Vol. 25, no 5, 1381-1388 p.
IdentifiersURN: urn:nbn:se:liu:diva-14472DOI: 10.1116/1.2757178OAI: oai:DiVA.org:liu-14472DiVA: diva2:23561