Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
2005 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, Vol. 23, no 6, 2486-2495 p.Article in journal (Refereed) Published
We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300 °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290 GPa, respectively. The electrical resistivity was 330 µ cm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6 µ at a contact force of 800 N compared to 3.2 µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.
Place, publisher, year, edition, pages
2005. Vol. 23, no 6, 2486-2495 p.
titanium compounds, silicon compounds, wide band gap semiconductors, nanocomposites, amorphous semiconductors, thin films, sputter deposition, electron microscopy, X-ray diffraction, X-ray photoelectron spectra, surface morphology, ductility, indentation, hardness, electrical resistivity, electrical contacts, contact resistance
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-14473DOI: 10.1116/1.2131081OAI: oai:DiVA.org:liu-14473DiVA: diva2:23562