Photoemission studies of Ti3SiC2 and nanocrystalline-TiC/amorphous-SiC nanocomposite thin films
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 4, 045417- p.Article in journal (Refereed) Published
Photoemissionstudies using synchrotron radiation have been performed on epitaxial Ti3SiC2(0001)and compound nanocrystalline (nc-)TiC/amorphous (a-)SiC thin films deposited by magnetronsputtering. As-introduced samples were found to be covered by surfaceoxides, SiOx and TiOx. These oxides could be removed byin-situ annealing to ~1000 °C. For as-annealed Ti3SiC2(0001), surface Si wasobserved and interpreted as originating from decomposition of Ti3SiC2 throughSi out-diffusion. For nc-TiC/a-SiC annealed in situ to ~1000 °C, thesurface instead exhibited a dominant contribution from graphitic carbon, alsowith the presence of Si, due to C and Siout-diffusion from the a-SiC compound or from grain boundaries.
Place, publisher, year, edition, pages
2006. Vol. 74, no 4, 045417- p.
titanium compounds, silicon compounds, wide band gap semiconductors, nanocomposites, amorphous state, epitaxial layers, sputtered coatings, photoelectron spectra, surface composition, annealing, decomposition, surface diffusion, grain boundaries
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-14477DOI: 10.1103/PhysRevB.74.045417OAI: oai:DiVA.org:liu-14477DiVA: diva2:23566