Intrusion-type deformation in epitaxial Ti3SiC2/TiCx nanolaminates
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 12, 123124- p.Article in journal (Refereed) Published
We investigate the deformation of epitaxial Ti3 Si C2 (0001) Ti Cx (111) (x∼0.67) nanolaminates deposited by magnetron sputtering. Nanoindentation and transmission electron microscopy show that the Ti3 Si C2 layers deform via basal plane slip and intrusion into the TiC layers, suppressing kink-band and pile-up deformation behaviors analogous with monolithic Ti3 Si C2. This remarkable response to indentation is due to persistent slip in the TiC layers and prevention of gross slip throughout the nanolaminate by the interleaving Ti3 Si C2 layers. Hardness and Young's modulus were measured as ∼15 and ∼240 GPa, respectively.
Place, publisher, year, edition, pages
2007. Vol. 91, no 12, 123124- p.
IdentifiersURN: urn:nbn:se:liu:diva-14480DOI: 10.1063/1.2789710OAI: oai:DiVA.org:liu-14480DiVA: diva2:23569