High Power, High Efficiency SiC Power Amplifier for Phased ArrayRadar and VHF Applications
(English)Manuscript (preprint) (Other academic)
Wide band gap semiconductor (SiC & GaN) based power amplifiers offer severalsystem critical advantages such as less current leakage, better stability at high temperatureand easier impedance matching. This paper describes the design and fabrication of a singlestageclass-AB power amplifier for 30 to 100 MHz using SiC Schottky gate MetalSemiconductor Field Effect Transistor (MESFET). The maximum output power achieved is46.2 dBm (~42 W) at 50 V DC supply voltage at the drain. The maximum power gain is 21dB and a maximum PAE of 62 %. The amplifier performance was also checked at a higherdrain bias of 60 V at 50 MHz. At this bias voltage the maximum output power was 46.7dBm (~47 W) with a power gain of 21 dB and a maximum PAE of 42.7 %. An averageOIP3 of 54 dBm have been achieved for this amplifier.
Power Amplifier, Phased Array Radar, VHF, Silicon Carbide and MESFET.
IdentifiersURN: urn:nbn:se:liu:diva-20862OAI: oai:DiVA.org:liu-20862DiVA: diva2:236602