Broadband Power Amplifier performance of SiC MESFET and CostEffective SiGaN HEMT
(English)Manuscript (preprint) (Other academic)
This paper describes the broadband power amplifier performance of two differentwide band gap technology transistors at 0.7 to 1.8 GHz using cost effective NitronexGaN HEMT on Silicon (Si) and Cree Silicon Carbide MESFET. The measured resultsfor GaN amplifier are; maximum output power at Vd = 28 V is 42.5 dBm (~18 W), amaximum PAE of 39 % and a maximum gain of 19.5 dB is obtained. The measuredmaximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W),with a PAE of 32 % and a power gain above 10 dB. At a drain bias of Vd = 66 V at700 MHz for SiC MESFET amplifier the Pmax was 42.2 dBm (~16.6 W) with a PAE of34.4 %.
Broadband, Power Amplifier, GaN HEMT, Silicon Carbide (SiC), MESFET
IdentifiersURN: urn:nbn:se:liu:diva-20863OAI: oai:DiVA.org:liu-20863DiVA: diva2:236604