High Power, Single Stage SiGaN HEMT Class EPower Amplifier at GHz Frequencies
(English)Manuscript (preprint) (Other academic)
A high power single stage class E power amplifier is implemented with lumped elements at 0.89-1.02GHz using Silicon GaN High Electron Mobility Transistor as an active device. The maximum drain efficiency (DE) and power added efficiency (PAE) of 67 and 65 % respectively is obtained with a maximum output power of 42.2 dBm (~ 17 W) and amaximum power gain of 15 dB. We obtained good results at all measured frequencies.
Class E, PAE, Power Amplifiers, Gallium Nitride, HEMT
IdentifiersURN: urn:nbn:se:liu:diva-20864OAI: oai:DiVA.org:liu-20864DiVA: diva2:236608