A New Load Pull TCAD Simulation Technique for Class D, E & FSwitching Characteristics of Transistors
(English)Manuscript (preprint) (Other academic)
We have further developed a computational load pull simulation technique inTCAD. It can be used to study the Class-D, E & F switching response of the transistors. Westudied our enhanced version of previously fabricated and tested SiC transistor. Thesimulated Gain (dB), Power density (W/mm), switching loss (W/mm) and power addedefficiency (PAE %) at 500 MHz were studied using this technique. A PAE of 84 % at500MHz with 26 dB Power gain and power density of 2.75 W/mm is achieved. Thistechnique allows the prediction of switching response of the device before undertaking anexpensive and time-consuming device fabrication. The beauty of this technique is that, weneed no matching and other lumped element networks to study the large signal switchingbehavior of RF and microwave transistors.
Power Amplifier, Silicon Carbide, TCAD, Switching, Technique
IdentifiersURN: urn:nbn:se:liu:diva-20865OAI: oai:DiVA.org:liu-20865DiVA: diva2:236609