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Influence of interface state charges on RF performance of LDMOS transistor
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Infineon Technologies Nordic AB, SE-164 81 Kista, Sweden.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2008 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, no 7, 1099-1105 p.Article in journal (Refereed) Published
Abstract [en]

Si-LDMOS transistor is studied by TCAD simulation for improved RF performance. In LDMOS structure, a low-doped reduced surface field (RESURF) region is used to obtain high breakdown voltage, but it reduces the transistor RF performance due to high on-resistance. The interface charges between oxide and the RESURF region are studied and found to have a strong impact on the transistor performance both in DC and RF. The presence of excess interface state charges at the RESURF region results not only higher DC drain current but also improved RF performance in terms of power, gain and efficiency. The most important achievement is the enhancement of operating frequency and RF output power is obtained well above 1 W/mm up to 4 GHz.

Place, publisher, year, edition, pages
Elsevier , 2008. Vol. 52, no 7, 1099-1105 p.
Keyword [en]
Semiconductor devices; Interface state charges; Power electronics; Amplifiers; CAD simulations
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-20866DOI: 10.1016/j.sse.2008.04.001OAI: oai:DiVA.org:liu-20866DiVA: diva2:236612
Available from: 2009-09-24 Created: 2009-09-24 Last updated: 2017-12-13Bibliographically approved
In thesis
1. Microwave Power Devices and Amplifiers for Radars and Communication Systems
Open this publication in new window or tab >>Microwave Power Devices and Amplifiers for Radars and Communication Systems
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. Similarly Si-LDMOS being low cost and lonely silicon based RF power transistor has great contributions especially in the communication sector.

The focus of this thesis work is both device study and their application in different classes of power amplifiers. In the first part of our research work, we studied the performance of transistors in device simulation using physical transistor structure in Technology Computer Aided Design (TCAD). A comparison between the physical simulations and measured device characteristics has been carried out.  We optimized GaN HEMT, Si-LDMOS and enhanced version of our previously fabricated and tested SiC MESFET transistor for enhanced RF and DC characteristics. For large signal AC performance we further extended the computational load pull (CLP) simulation technique to study the switching response of the power transistors. The beauty of our techniques is that, we need no lumped or distributive matching networks to study active device behavior in almost all major classes of power amplifiers. Using these techniques, we studied class A, AB, pulse input class-C and class-F switching response of SiC MESFET. We obtained maximum PAE of 78.3 % with power density of 2.5 W/mm for class C and 84 % for class F power amplifier at 500 MHz. The Si-LDMOS has a vital role and is a strong competitor to wideband gap semiconductor technology in communication sector. We also studied Si-LDMOS (transistor structure provided by Infineon Technologies at Kista, Stockholm) for improved DC and RF performance. The interface charges between the oxide and RESURF region are used not only to improve DC drain current and RF power, gain & efficiency but also enhance its operating frequency up to 4 GHz.

In the second part of our research work, six single stage (using single transistor) power amplifiers have been designed, fabricated and characterized in three phases for applications in communications, Phased Array Radars and EW systems. In the first phase, two class AB power amplifiers are designed and fabricated. The first PA (26 W) is designed and fabricated at 200-500 MHz using SiC MESFET. Typical results for this PA at 60 V drain bias at 500 MHz are, 24.9 dB of power gain, 44.15 dBm output power (26 W) and 66 % PAE. The second PA is designed at 30-100 MHz using SiC MESFET. At 60 V drain bias Pmax is 46.7 dBm (~47 W) with a power gain of 21 dB.

In the second phase, for performance comparison, three broadband class AB power amplifiers are designed and fabricated at 0.7-1.8 GHz using SiC MESFET and two different GaN HEMT technologies (GaN HEMT on SiC and GaN HEMT on Silicon substrate). The measured maximum output power for the SiC MESFET amplifier at a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4 %. The results for GaN HEMT on SiC amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34 % and a power gain above 10 dB. The maximum output power for GaN HEMT on Si amplifier is 42.5 dBm (~18 W) with a maximum PAE of 39 % and a gain of 19.5 dB.

In the third phase, a high power single stage class E power amplifier is implemented with lumped elements at 0.89-1.02 GHz using Silicon GaN HEMT as an active device. The maximum drain efficiency (DE) and PAE of 67 and 65 % respectively is obtained with a maximum output power of 42.2 dBm (~ 17 W) and a maximum power gain of 15 dB.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2009. 66 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1265
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-19267 (URN)9789173935760 (ISBN)
Public defence
2009-09-11, BL32 (Nobel), B-huset, Campus Valla, Linköpings universitet, Linkoping, 10:15 (English)
Opponent
Supervisors
Available from: 2009-09-24 Created: 2009-08-21 Last updated: 2017-12-13Bibliographically approved
2. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems
Open this publication in new window or tab >>Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. From economical point of view, a single wideband RF power module is more desirable rather than multiple narrowband PAs especially for multi-band and multi-mode operation. Therefore, device modeling has now become much more crucial for such applications. In order to reduce the device design cycle time, the researchers also heavily rely on computer aided design (CAD) tools. With improvement in CAD technology the model extraction has become more accurate and device physical structure optimization can be carried out with less number of iterations.

LDMOS devices have been dominating in the communication field since last decade and are still widely used for PA design and development. This thesis deals with the optimization of RFLDMOS transistor and its evaluation in different PA classes, such as linear, switching, wideband and multi-band applications. For accurate evaluation of RF-LDMOS transistor parameters, some techniques are also developed in technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods.

Initially the RF-LDMOS is studied in TCAD for the improved RF performance. The physical intrinsic structure of RF-LDMOS is provided by Infenion Technologies AG. A reduced surface field (RESURF) of low-doped drain (LDD) region is considered in detail because it plays an important role in RF-LDMOS devices to obtain high breakdown voltage (BVDS). But on the other hand, it also reduces the RF performance due to high on-resistance (Ron). The excess interface state charges at the RESURF region are introduced to reduce the Ron, which not only increases the dc drain current, but also improve the RF performance in terms of power, gain and efficiency. The important achievement is the enhancement in operating frequency up to 4 GHz. In LDD region, the effect of excess interface charges at the RESURF is also compared with dual implanted-layer of p-type and n-type. The comparison revealed that the former provides 43 % reduction in Ron with BVDS of 70 V, while the later provides 26 % reduction in Ron together with BVDS of 64 - 68 V.

In the second part of my research work, computational load pull (CLP) simulation technique is used in TCAD to extract the impedances of RF-LDMOS at different frequencies under large signal operation. Flexible matching is an issue in the design of broadband or multi-band PAs. Optimum impedance of RF-LDMOS is extracted at operating frequencies of 1, 2 and 2.5 GHz in class AB PA. After this, CLP simulation technique is further developed in TCAD to study the non-linear behavior of RF devices. Through modified CLP technique, non-linear effects inside the transistor structure are studied by conventional two-tone RF signals in time domain. This is helpful to detect and understand the phenomena, which can be resolved to improve the device performance. The third order inter-modulation distortion (IMD3) of RF- LDMOS was observed at different power levels. The IMD3 of −22 dBc is obtained at 1-dB compression point (P1-dB), while at 10 dB back off the value increases to −36 dBc. These results were also verified experimentally by fabricating a linear PA. Similarly, CLP technique is developed further for the analysis of RF devices in high efficiency operation by investigating the odd harmonic effects for the design of class-F PA. RF-LDMOS can provide a power added efficiency (PAE) of 81.2 % in class-F PA at 1 GHz in TCAD simulations. The results are verified by design and fabrication of class-F PA using large signal model of the similar device in ADS. In fabrication, a PAE of 76 % is achieved.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2010. 64 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1346
Keyword
RF-LDMOS, power amplifiers, technology CAD, load-pull, non-linear analysis, and switching analysis
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-61599 (URN)978-91-7393-294-3 (ISBN)
Public defence
2010-12-03, Plank, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15
Opponent
Supervisors
Available from: 2010-11-17 Created: 2010-11-17 Last updated: 2010-11-17Bibliographically approved

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Kashif, Ahsan-UllahSvensson, ChristerAzam, SherWahab, Qamar

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