Comparison of Two GaN TransistorsTechnology in Broadband Power Amplifiers
(English)Manuscript (preprint) (Other academic)
This paper compares the performance of two different GaN technology transistors(GaN HEMT on Silicon substrate (PA1) and GaN on SiC PA2) utilized in two broadbandpower amplifiers at 0.7-1.8 GHz. The study explores the broadband power amplifierpotential of both GaN HEMT technologies for Phased Array Radar (PAR) and electronicswarfare (EW) systems. The measured maximum output power for PA1 is 42.5 dBm(~18 W) with a maximum PAE of 39 % and a gain of 19.5 dB. While the measuredmaximum output power for PA2 is 40 dBm with PAE of 35 % and a power gain slightlyabove 10 dB. We obtained high power, gain, wider band width and unconditionalstability without feedback for amplifier based on GaN HEMT technology fabricated on Sisubstrate.
Broadband, Power Amplifier, GaN, HEMT and Single-Stage
IdentifiersURN: urn:nbn:se:liu:diva-20867OAI: oai:DiVA.org:liu-20867DiVA: diva2:236614