A 72.2Mbit/s Transformer-Based Power Amplifier in 65nm CMOS for 2.4GHz 802.11n WLAN
2008 (English)In: Proceedings of 26th IEEE NORCHIP Conference, IEEE , 2008, 54-56 p.Conference paper (Refereed)
This paper describes the design of a power amplifier (PA) for WLAN 802.11n fabricated in 65 nm CMOS technology. The PA utilizes 3.3 V thick-gate oxide (5.2 nm) transistors and a two-stage differential configuration with two integrated transformers for input and interstage matching. For a 72.2 Mbit/s, 64-QAM, 802.11n OFDM signal at an average and peak output power of 11.6 dBm and 19.6 dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 17 dBm.
Place, publisher, year, edition, pages
IEEE , 2008. 54-56 p.
CMOS analogue integrated circuits, OFDM modulation, UHF power amplifiers, power transformers, quadrature amplitude modulation, wireless LAN
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-21005DOI: 10.1109/NORCHP.2008.4738281ISBN: 978-1-4244-2492-4OAI: oai:DiVA.org:liu-21005DiVA: diva2:240374
26th IEEE NORCHIP Conference, November 17–18, Tallinn, Estonia