Low Voltage Class-E Power Amplifiers for DECT and Bluetooth in 130nm CMOS
2009 (English)In: Proceedings of 9th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), San Diego, CA, USA, January 19–21, IEEE , 2009, 1-4 p.Conference paper (Refereed)
This paper presents the design of two low- voltage differential class-E power amplifiers (PA) for DECT and Bluetooth fabricated in 130 nm CMOS. In order to minimize the on-chip losses and to achieve a high efficiency at low supply voltages, the PAs do not use on-chip output matching networks. At 1.5V supply voltage, the DECT PA delivers +26.4 dBm of output power with a drain efficiency (DE) and power-added efficiency (PAE) of 41% and 30%, respectively. The Bluetooth PA delivers +22.7 dBm at IV with a DE and PAE of 48% and 36%, respectively. A continuous long-term test of 100 hours proves the reliability of the design.
Place, publisher, year, edition, pages
IEEE , 2009. 1-4 p.
Bluetooth, CMOS integrated circuits, cordless telephone systems, differential amplifiers, power amplifiers, reliability
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-21022DOI: 10.1109/SMIC.2009.4770499ISBN: 978-1-4244-3940-9OAI: oai:DiVA.org:liu-21022DiVA: diva2:240417
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09, 19-21 January, San Diego, CA, USA