A 72.2Mbit/s LC-Based Power Amplifier in 65nm CMOS for 2.4GHz 802.11n WLAN
2008 (English)In: Proceedings of the 15th Mixed Design of Integrated Circuits and Systems (MIXDES) Conference, IEEE , 2008, 155-158 p.Conference paper (Refereed)
This paper describes the design and evaluation of a power amplifier (PA) for WLAN 802.11n in 65nm CMOS technology. The PA utilizes 3.3V thick-gate oxide (5.2nm) transistors and a two-stage differential configuration with two integrated inductors for input and interstage matching. For a 72.2Mbit/s, 64-QAM 802.11n OFDM signal at an average and peak output power of 9.4dBm and 17.4dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 14dBm.
Place, publisher, year, edition, pages
IEEE , 2008. 155-158 p.
Baluns, CMOS analog integrated circuits, Impedance matching, Power amplifiers, Transformers
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-21025ISBN: 978-83-922632-7-2OAI: oai:DiVA.org:liu-21025DiVA: diva2:240422
15th IEEE Mixed Design of Integrated Circuits and Systems (MIXDES) Conference, June 19-21, Poznan, Poland