Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
2009 (English)In: OPTO-ELECTRONICS REVIEW, ISSN 1230-3402, Vol. 17, no 3, 260-264 p.Article in journal (Refereed) Published
We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.
Place, publisher, year, edition, pages
2009. Vol. 17, no 3, 260-264 p.
optical efficiency, photoluminescence (PL), InGaNAs/GaAs single quantum well (SQW) nanostructures, localized excitons, full width at half maximum (FWHM), PL integrated intensity, thermal annealing
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-21505DOI: 10.2478/s11772-009-0008-9OAI: oai:DiVA.org:liu-21505DiVA: diva2:241456