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A 4-bit 2.5-GS/s 30-mW Flash ADC in 90nm CMOS
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2009 (English)In: Swedish System on Chip Conference, SSoCC, Arild, May 4-5, Lunds universitet, 2009Conference paper, Published paper (Other academic)
Abstract [en]

A 2.5 GS/s flash ADC, fabricated in 90nm CMOS,avoids traditional power, speed and accuracy trade-offs by usingcomparator redundancy with power-gating capabilities.Redundancy removes the need to control comparator offsets,allowing the large process-variation induced mismatch of smalldevices in nanometer technologies. This enables the use of smallsized,ultra-low-power comparators. Measurement results showthat the ADC dissipates 30 mW at 1.2 V. With 63 gate-ablecomparators, the ADC achieves 4.0 effective number of bits.

Place, publisher, year, edition, pages
Lunds universitet, 2009.
Keyword [en]
analog-digital conversion, CMOS analog integrated circuits, high-speed electronics, power demand
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-21922OAI: oai:DiVA.org:liu-21922DiVA: diva2:242042
Available from: 2009-10-06 Created: 2009-10-06 Last updated: 2009-10-08

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Sundström, TimmyAlvandpour, Atila

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