A 4-bit 2.5-GS/s 30-mW Flash ADC in 90nm CMOS
2009 (English)In: Swedish System on Chip Conference, SSoCC, Arild, May 4-5, Lunds universitet, 2009Conference paper (Other academic)
A 2.5 GS/s flash ADC, fabricated in 90nm CMOS,avoids traditional power, speed and accuracy trade-offs by usingcomparator redundancy with power-gating capabilities.Redundancy removes the need to control comparator offsets,allowing the large process-variation induced mismatch of smalldevices in nanometer technologies. This enables the use of smallsized,ultra-low-power comparators. Measurement results showthat the ADC dissipates 30 mW at 1.2 V. With 63 gate-ablecomparators, the ADC achieves 4.0 effective number of bits.
Place, publisher, year, edition, pages
Lunds universitet, 2009.
analog-digital conversion, CMOS analog integrated circuits, high-speed electronics, power demand
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-21922OAI: oai:DiVA.org:liu-21922DiVA: diva2:242042