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Low-Voltage High-Efficiency Class-E Power Amplifiers in 130nm CMOS for Short-Range Wireless Communications
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2009 (English)In: in Swedish System on Chip Conference, SSoCC, Arild, May 4-5, Lunds universitet, 2009Conference paper, Published paper (Other academic)
Abstract [en]

This paper presents the design of two lowvoltagedifferential class-E power amplifiers (PA) for DECTand Bluetooth fabricated in 130nm CMOS. In order tominimize the on-chip losses and to achieve a high efficiency atlow supply voltages, the PAs do not use on-chip outputmatching networks. At 1.5V supply voltage, the DECT PAdelivers +26.4dBm of output power with a drain efficiency(DE) and power-added efficiency (PAE) of 41% and 30%,respectively. The Bluetooth PA delivers +22.7dBm at 1V witha DE and PAE of 48% and 36%, respectively. A continuouslong-term test of 100 hours proves the reliability of thedesign.

Place, publisher, year, edition, pages
Lunds universitet, 2009.
Keyword [en]
CMOS, efficiency, power amplifier, reliability testing, frequency shift keying
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-21926OAI: oai:DiVA.org:liu-21926DiVA: diva2:242053
Available from: 2009-10-06 Created: 2009-10-06 Last updated: 2009-10-08

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Fritzin, JonasAlvandpour, Atila

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