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Carrier and spin injection from ZnMnSe to CdSe quantum dots
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Institute of multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577, Japan.
Institute of multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577, Japan.
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2009 (English)Conference paper, Published paper (Other academic)
Abstract [en]

Optical carrier/exction and spin injection processes from a ZnMnSe dilute magnetic semiconductor (DMS) to CdSe quantum dots (QD’s) are studied in detail by means of spinpolarized magneto- photoluminescence (PL) and PL excitation spectroscopies. Efficiency of carrier/exciton transfer is found to be practically independent of width (Lb) of a ZnSe barrier layer inserted between the DMS and QD’s. This is tentatively explained in terms of photonexchange energy transfer. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with large Lb, pointing towards increasing spin loss.

Place, publisher, year, edition, pages
2009.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-21949OAI: oai:DiVA.org:liu-21949DiVA: diva2:242104
Conference
Special talk at the Third International Conference on Quantum, Nano and Micro Technologies, February 1-7, 2009, Cancun, Mexico
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-03-27

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Dagnelund, DanielBuyanova, IrinaChen, Weimin

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