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New directions in RF LNA design
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2004 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

The RF field develops fast today and to meet the increasing needs from more and more users and higher and higher data rates for mobile terminals the number of wireless standards are rapidly increasing. This has lead to an increased number of frequency spectra dedicated for wireless communication, such as the recent ones for WCDMA, Bluetooth, and WLAN. Instead of using one RF front-end for each standard as done today, the need for multiband multistandard front-end receiver architectures will be large in the near future. This is a big step towards software defined radio. This single front-end approach will lead to more flexible receivers to a lower cost for the consumers. Multiband multistandard receivers need circuitry that can adapt to several RF-bands with very varying carrier frequencies and different requirements. For cost effectiveness there should also be a minimum of external components and on-chip passives.

One of the most critical components in a multiband multistandard receiver, independent of the receiver architecture, is the low-noise amplifier (LNA). The LNA must be capable of handling several carrier frequencies within a large bandwidth. Therefore it is not possible to optimize the circuit performance for just one frequency band as can be done for a single application LNA. This makes the design task more difficult. Two different circuit topologies that are suitable for multi band multistandard LNAs are:

• Wideband LNAs that cover the frequency bands of interest

• Tunable narrowband LNAs, tunable over the frequency bands of interest

The main focus of the research has been to develop suitable circuit techniques for such LNAs in silicon technologies (CMOS and BiCMOS) in the frequency range 1-10 GHz with a minimum of passives. Both wideband LNAs and tunable narrowband LNAs based on the principle of active recursive filters have been implemented in both CMOS and BiCMOS technologies.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2004. , 36 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1101
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-22629Local ID: 1911ISBN: 91-7373-984-7 (print)OAI: oai:DiVA.org:liu-22629DiVA: diva2:242942
Presentation
2004-06-15, Glashuset, Linköpings universitet, Linköping, 13:15 (Swedish)
Opponent
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2014-05-27
List of papers
1. A Tuned, Inductorless, Recursive Filter LNA in CMOS
Open this publication in new window or tab >>A Tuned, Inductorless, Recursive Filter LNA in CMOS
2002 (English)In: Proceedings of the European Solid-State Circuit Conference (ESSCIRC), Florens, Italy, September, 2002, 351-354 p.Conference paper, Published paper (Refereed)
Abstract [en]

An active recursive filter approach is proposed for the implementation of an inductorless, tuned LNA in CMOS. Such an LNA was designed and fabricated ina 0.8 μm CMOS process. In simulation, the feasibility of this type of LNA was demonstrated, and reasonably good performance was obtained. The fabricated device shows a center frequency tuning range from 250 MHz to 975 MHz. Gain and Q value are tunable in a wide range. The LNA exhibits an input referred 1 dB compression point of -31 dB m and a noise figure of approximately 3 dB measured at 900 MHz center frequency.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-14084 (URN)
Conference
28th European Solid-State Circuit Conference (ESSCIRC). Firenze, Italy, September 24-26, 2002.
Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
2. An Active Recursive RF Filter in 0.35 μm BiCMOS
Open this publication in new window or tab >>An Active Recursive RF Filter in 0.35 μm BiCMOS
2005 (English)In: Journal of Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, Vol. 44, no 3, 213-218 p.Article in journal (Refereed) Published
Abstract [en]

An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 μm SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is −26 and −34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.

Keyword
active filter, tuneable recursive filter for multicarrier systems, inductorless RF filter, tuneable gain and Q
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-14085 (URN)10.1007/s10470-005-3002-2 (DOI)
Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
3. Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
Open this publication in new window or tab >>Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
2003 (English)In: Proceedings of the 29th European Solid-State Circuits Conference, 2003. ESSCIRC '03, 2003, 655-658 p.Conference paper, Published paper (Refereed)
Abstract [en]

A differential wideband LNA for a multistandard receiver has been designed and implemented in 0.18μm CMOS. The circuit topology is a two-stage amplifier with active feedback. The input stage is a common-source stage with a common-drain stage in the feedback loop for impedance matching. Bandwidth enhancement with inductive shunt-peaking is used for maximizing the bandwidth. Measurements on the fabricated device show a power gain of 13.1 dB and a 3-dB bandwidth of nearly 7 GHz together with an IIP3 and a 1-dB compression point of -4.7 dBm and -15.2 dBm respectively. The measured noise figures are 3.3 dB at 1 GHz and 5.5 dB at 6 GHz. Reported LNAs with similar performance are usually implemented with bipolar transistors or MESFETs.

Keyword
CMOS integrated circuits, integrated circuit design, radio receivers, wideband amplifiers
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-14087 (URN)10.1109/ESSCIRC.2003.1257220 (DOI)0-7803-7995-0 (ISBN)
Conference
29th European Solid-State Circuits Conference, 2003. Estoril, Portugal, September 16-18.
Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
4. Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
Open this publication in new window or tab >>Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
2004 (English)In: Proceedings of the Norchip 2004 Conference, Oslo, Norway, November, 2004, 123-126 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, measurements of drain thermal noise for three NMOS devices with different channel lengths was carried out. The three NMOS devices were all implemented in a 0.18 μm CMOS technology, with channel lengths 0.18. 0.36, and 0.72 μm, respectively. The result was then compared with simulated data using the BSIM3- model and parameters provided by the vendor Large discrepancies between measurements and simulations were observed. This work was done in order to understand how to utilize transistor length as a design parameter to achieve optimal noise gures for wideband LNAs in deep submicron technologies.

Keyword
CMOS, wideband LNAs
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-14089 (URN)10.1109/NORCHP.2004.1423838 (DOI)0-7803-8510-1 (ISBN)
Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
5. On the excess thermal noise in short channel MOS transistors
Open this publication in new window or tab >>On the excess thermal noise in short channel MOS transistors
(English)Manuscript (preprint) (Other academic)
Abstract [en]

Drain noise current was measured at an extended temperature range on NMOS transistors of various length made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise at low currents. We therefore suggest that the excess noise observed in short channel MOS transistors are due to shot noise, with an explanation borrowed from the theory of vacuum diodes.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-100236 (URN)
Available from: 2013-10-31 Created: 2013-10-31 Last updated: 2013-10-31

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