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Silicon-on-insulator CMOS technology for system-on-chip
Linköping University, Department of Electrical Engineering.
Linköping University, Department of Electrical Engineering. Linköping University, Department of Electrical Engineering, Electronics System.
2004 (English)In: Proc. Swedish System-on-Chip Conf., SSoCC'04, 2004Conference paper, Published paper (Other academic)
Abstract [en]

This paper gives an introduction to the silicon-on-insulator (SOI) CMOS technology and presents the major advantages and disadvantages of using SOI. Some unwanted effects is introduced when using SOI, compared with bulk, of which the kink effect, history effect and self heating are the most important. Methods to compensate for these effects are presented. At the end a comparison between bulk and SOI devices is done, from which we conclude that the SOI technologies appears to be more suited for the future sub nanometer and low supply voltage technologies, than bulk technologies. The power consumption is also expected to decrease if SOI is used instead of bulk devices.

Place, publisher, year, edition, pages
2004.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-23631Local ID: 3123OAI: oai:DiVA.org:liu-23631DiVA: diva2:243946
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2009-10-14

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Säll, ErikVesterbacka, Mark

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