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Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 3, 1485-1488 p.Article in journal (Refereed) Published
Abstract [en]

Different properties of the reported stacking faults (SFs) and that both these types of SF are present in the material after electrical degradation of pin diodes are shown. One is caused by perfect dislocations, deflected or misfit dislocation that had dissociated into two partial dislocations. The partials are assumed to be close to each other with a separation below the detection limit of the SWBT measurements. Thus, enough energy is provided and the leading partial moves away from the other partial and forms the extended SF.

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2004. Vol. 95, no 3, 1485-1488 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-24574DOI: 10.1063/1.1635996Local ID: 6747OAI: oai:DiVA.org:liu-24574DiVA: diva2:244895
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-12-13

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Bergman, PederHallin, ChristerJanzén, Erik

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