Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 16, no 17Article in journal (Refereed) Published
Oxidation of hexagonal SiC surfaces and SiO2/SiC interfaces were analyzed using photoemission and synchrotron radiation. The existence of carbon clusters or carbon-containing by-products and the existence of sub-oxides at the SiO2/SiC interface had a significant effect on MOS device characteristic. Si-terminated surfaces of hexagonal n-type SiC(0001) crystals were considered since they were found to be efficient for device applications. The results show that no carbon clusters or carbon-containing by-product could be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than 10 Å.
Place, publisher, year, edition, pages
2004. Vol. 16, no 17
IdentifiersURN: urn:nbn:se:liu:diva-24579DOI: 10.1088/0953-8984/16/17/017Local ID: 6752OAI: oai:DiVA.org:liu-24579DiVA: diva2:244900