liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology.
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 16, no 17Article in journal (Refereed) Published
Abstract [en]

Oxidation of hexagonal SiC surfaces and SiO2/SiC interfaces were analyzed using photoemission and synchrotron radiation. The existence of carbon clusters or carbon-containing by-products and the existence of sub-oxides at the SiO2/SiC interface had a significant effect on MOS device characteristic. Si-terminated surfaces of hexagonal n-type SiC(0001) crystals were considered since they were found to be efficient for device applications. The results show that no carbon clusters or carbon-containing by-product could be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than 10 Å.

Place, publisher, year, edition, pages
2004. Vol. 16, no 17
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-24579DOI: 10.1088/0953-8984/16/17/017Local ID: 6752OAI: diva2:244900
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2011-01-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Virojanadara, ChariyaJohansson, Leif
By organisation
Department of Physics, Chemistry and Biology
In the same journal
Journal of Physics: Condensed Matter
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 29 hits
ReferencesLink to record
Permanent link

Direct link