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Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology.
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 16, no 17Article in journal (Refereed) Published
Abstract [en]

Oxidation of hexagonal SiC surfaces and SiO2/SiC interfaces were analyzed using photoemission and synchrotron radiation. The existence of carbon clusters or carbon-containing by-products and the existence of sub-oxides at the SiO2/SiC interface had a significant effect on MOS device characteristic. Si-terminated surfaces of hexagonal n-type SiC(0001) crystals were considered since they were found to be efficient for device applications. The results show that no carbon clusters or carbon-containing by-product could be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than 10 Å.

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2004. Vol. 16, no 17
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Natural Sciences
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URN: urn:nbn:se:liu:diva-24579DOI: 10.1088/0953-8984/16/17/017Local ID: 6752OAI: oai:DiVA.org:liu-24579DiVA: diva2:244900
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-12-13

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Virojanadara, ChariyaJohansson, Leif

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