Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 96, no 4, 2406-2408 p.Article in journal (Refereed) Published
The annealing behavior of the positively charged carbon vacancy in electron-irradiated 4H-SiC was studied. Electron paramagnetic resonance was used for the purpose of analysis. It was found that around 1000 °C, the EPR signal of the defect starts decreasing. Clear ligand hyperfine structure was also observed after annealing at 1350 °C. Results show that the EI6 center may be the positively charged carbon vacancy at the hexagonal lattice site of 4H-SiC.
Place, publisher, year, edition, pages
2004. Vol. 96, no 4, 2406-2408 p.
IdentifiersURN: urn:nbn:se:liu:diva-24580DOI: 10.1063/1.1771472Local ID: 6753OAI: oai:DiVA.org:liu-24580DiVA: diva2:244901