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Synchrotron radiation studies of the SiO2/SiC(0001) interface
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2004 (English)In: JOURNAL OF PHYSICS-CONDENSED MATTER ISSN (0953-8984): Volume: 16   Issue: 33   Special Issue: SI, Institute of Physics Publishing (IOPP), 2004, S3423-S3434 p.Conference paper, Published paper (Refereed)
Abstract [en]

Two questions thought to have a significant effect on SiC-MOS device characteristics are treated. The existence of carbon clusters or carbon containing by-products and the existence of sub-oxides at the SiO2/SiC interface. Results of photoemission studies using synchrotron radiation of the interface of the Si-terminated surface of n-type SiC(0001) crystals are presented. The results show that no carbon clusters or carbon containing by-product can. be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than similar to10 Angstrom. The presence of sub-oxides at the SiO2/SiC interface was predicted in a theoretical calculation and has been revealed in Si 2p core level data by several groups. These results were not unanimous; significant differences in the number of sub-oxide and shifts were reported. A study also including the Si 1s core level and Si KLL Auger transitions was therefore made. These data show the presence of only one sub-oxide at the interface, assigned to Si1+ oxidation states. The SiO2 chemical shift is shown to exhibit a dependence on oxide thickness, similar to but smaller in magnitude than the thickness dependence earlier revealed for SiO2/Si.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2004. S3423-S3434 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-24584DOI: 10.1088/0953-8984/16/33/002ISI: 000223706500003Local ID: 6758OAI: oai:DiVA.org:liu-24584DiVA: diva2:244905
Conference
Symposium on Synchrotron Radiation for Advanced Materials Analysis and Processing held at the ICMAT 2003/IUMRS-ICA 2003, Singapore, DEC 07-12, 2003
Note

Article number: PII: S0953-8984(04)81036-1

Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2012-08-27Bibliographically approved

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Johansson, LeifVirojanadara, Chariya

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