Synchrotron radiation studies of the SiO2/SiC(0001) interface
2004 (English)In: JOURNAL OF PHYSICS-CONDENSED MATTER ISSN (0953-8984): Volume: 16 Issue: 33 Special Issue: SI, Institute of Physics Publishing (IOPP), 2004, S3423-S3434 p.Conference paper (Refereed)
Two questions thought to have a significant effect on SiC-MOS device characteristics are treated. The existence of carbon clusters or carbon containing by-products and the existence of sub-oxides at the SiO2/SiC interface. Results of photoemission studies using synchrotron radiation of the interface of the Si-terminated surface of n-type SiC(0001) crystals are presented. The results show that no carbon clusters or carbon containing by-product can. be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than similar to10 Angstrom. The presence of sub-oxides at the SiO2/SiC interface was predicted in a theoretical calculation and has been revealed in Si 2p core level data by several groups. These results were not unanimous; significant differences in the number of sub-oxide and shifts were reported. A study also including the Si 1s core level and Si KLL Auger transitions was therefore made. These data show the presence of only one sub-oxide at the interface, assigned to Si1+ oxidation states. The SiO2 chemical shift is shown to exhibit a dependence on oxide thickness, similar to but smaller in magnitude than the thickness dependence earlier revealed for SiO2/Si.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2004. S3423-S3434 p.
IdentifiersURN: urn:nbn:se:liu:diva-24584DOI: 10.1088/0953-8984/16/33/002ISI: 000223706500003Local ID: 6758OAI: oai:DiVA.org:liu-24584DiVA: diva2:244905
Symposium on Synchrotron Radiation for Advanced Materials Analysis and Processing held at the ICMAT 2003/IUMRS-ICA 2003, Singapore, DEC 07-12, 2003
Article number: PII: S0953-8984(04)81036-12009-10-072009-10-072012-08-27Bibliographically approved