Studies of NO on 4H-SiC (0001) using Synchrotron Radiation
2004 (English)In: JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN (0953-8984): Volume: 16 Issue: 33 Special Issue: SI, Institute of Physics Publishing (IOPP), 2004, S3435-S3439 p.Conference paper (Refereed)
Detailed studies of the effects induced on the root3 x root3 R30degrees 4H-SiC(0001) surface after different NO exposures, at a substrate temperature of 800degreesC, have been made. Photoemission experiments using synchrotron radiation were performed in order to study the properties of the interface formed after gas exposures. Recorded Si 2p spectra show three shifted components, besides the bulk SiC peak. These are assigned as originating from Si(3)N(4) or Si(1+) sub-oxide, N-Si-O and SiO(2). It was concluded that SiO(2) does grow on top of N-Si-O and that Si(3)N(4)/Si(1+) is located at the interface. Two N 1s components are observed after NO exposures. The main one, located at around 398.05 eV, is assigned as originating from Si(3)N(4) and the weaker one is suggested to correspond to N-Si-O bonding. The assignments are made with the aid of Si 2p and N 1s spectra collected after NH(3) and O(2) exposures under similar conditions. No graphite-like carbon or carbon by-product at the interface can be detected after large NO or O(2) exposures.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2004. S3435-S3439 p.
IdentifiersURN: urn:nbn:se:liu:diva-24585DOI: 10.1088/0953-8984/16/33/003ISI: 000223706500004Local ID: 6759OAI: oai:DiVA.org:liu-24585DiVA: diva2:244906
Symposium on Synchrotron Radiation for Advanced Materials Analysis and Processing held at the ICMAT 2003/IUMRS-ICA 2003, Singapore, DEC 07-12, 2003